| 发明名称 |
Semiconductor laser gain device with mode filter |
| 摘要 |
A semiconductor gain device comprising a substrate; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface; a reflective mirror provided at one end of the optical waveguide layer, and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate from the first end to the second end with a radius of curvature of less than 4 mm. |
| 申请公布号 |
US8902945(B1) |
申请公布日期 |
2014.12.02 |
| 申请号 |
US201213567307 |
申请日期 |
2012.08.06 |
| 申请人 |
Emcore Corporation |
发明人 |
He Xiaoguang;Kwakernaak Martin |
| 分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor gain device comprising of:
a substrate defining an upper surface; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface; a reflective mirror provided at one end of the optical waveguide layer; and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate with a radius of curvature of between 3.5 mm and 4 mm. |
| 地址 |
Albuquerque NM US |
