发明名称 Semiconductor device
摘要 A semiconductor device includes a transistor, a light-emitting element, a first wiring, a driver circuit having a function of controlling the potential of the first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a first capacitor, and a second capacitor. One of a source and a drain of the transistor is connected to the light-emitting element. With this structure, voltage applied between the source and the gate of the transistor can be corrected in anticipation of variations in threshold voltage, so that the current supplied to the light-emitting element can be corrected.
申请公布号 US8901828(B2) 申请公布日期 2014.12.02
申请号 US201414262976 申请日期 2014.04.28
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime
分类号 G09G3/10;H05B37/02 主分类号 G09G3/10
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a first transistor; a first wiring; a second wiring; a third wiring; a first switch; a second switch; a third switch; a fourth switch; a fifth switch; a first capacitor; and a second capacitor, wherein a first electrode of the first capacitor is electrically connected to the first wiring through the first switch, wherein the first electrode of the first capacitor is electrically connected to a first electrode of the second capacitor, wherein a second electrode of the first capacitor is electrically connected to one of a source and a drain of the first transistor through the second switch, wherein the second electrode of the first capacitor is electrically connected to a gate of the first transistor, wherein the first electrode of the first capacitor is electrically connected to the other of the source and the drain of the first transistor through the third switch, wherein the second electrode of the second capacitor is electrically connected to the other of the source and the drain of the first transistor, wherein the second wiring is electrically connected to the one of the source and the drain of the first transistor through the fourth switch, and wherein the first electrode of the second capacitor is electrically connected to the third wiring through the fifth switch.
地址 Atsugi-shi, Kanagawa-ken JP