Light emitting device and manufacturing method thereof

摘要

A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.

主权项

1. A light emitting device comprising:
a pixel portion comprising a light emitting element and a first transistor; a first wiring electrically connected to one of a source electrode and a drain electrode of the first transistor; a first protective circuit comprising a first diode and a second diode wherein the first diode and the second diode are electrically connected to the first wiring; a second wiring electrically connected to a gate electrode of the first transistor; a second protective circuit comprising a third diode and a fourth diode wherein the third diode and the fourth diode are electrically connected to the second wiring.