| 摘要 |
<p>The present invention can form an optimized blank mask. When a metal layer of a blank mask is formed, variables such as layer forming power, the change level of a layer forming gas and process pressure are changed, thereby controlling the stress of a metal layer consisting of a single layer or a multiple layer with 250 MPa or less and having a planarization change of about 0.1 um after and before a metal layer is formed. In a blank mask according to the present invention, a metal layer is formed on a transparent layer. The metal layer includes at least one among a light shielding layer, an anti-reflection layer, a semi-transparent layer, a phase shift layer, a hard mask layer, an etch barrier layer, and a semi-transparent layer. Each metal layer formed has a planarization change of about 0.1 um after and before a layer is formed.</p> |
