Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line

摘要

A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.

主权项

1. A memory device comprising:
a plurality of magnetic random access memory (MRAM) cells; a field line; and a field line controller configured to generate a write sequence that traverses the field line, the write sequence for writing a multi-bit word to the plurality of MRAM cells, the multi-bit word including a first subset of bits having a first polarity and a second subset of bits having a second polarity; wherein the write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.