发明名称 High efficiency solar cells fabricated by inexpensive PECVD
摘要 A photovoltaic device includes one or more layers of a photovoltaic stack formed on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Reduced defect zones are disposed adjacent to contact regions in portions of the photovoltaic cell and are formed by an anneal configured to improve overall performance.
申请公布号 US8901695(B2) 申请公布日期 2014.12.02
申请号 US201213544415 申请日期 2012.07.09
申请人 International Business Machines Corporation 发明人 Fogel Keith E.;Hong Augustin J.;Kim Jeehwan;Sadana Devendra K.
分类号 H01L31/0203 主分类号 H01L31/0203
代理机构 Tutunjian & Bitetto, P.C. 代理人 Tutunjian & Bitetto, P.C. ;Percello Louis J.
主权项 1. A photovoltaic device, comprising: one or more layers of a photovoltaic stack formed on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process, wherein the one or more layers include a buffer layer between a transparent electrode formed on the substrate and a p-type layer; contacts formed on the photovoltaic stack to provide a photovoltaic cell; and reduced defect zones disposed adjacent to contact regions in portions of the photovoltaic cell and formed by an anneal configured to improve overall performance, the anneal including a temperature of between about 155 degrees Celsius and about 250 degrees Celsius to render the reduced defect zones more conductive.
地址 Armonk NY US