发明名称 |
High efficiency solar cells fabricated by inexpensive PECVD |
摘要 |
A photovoltaic device includes one or more layers of a photovoltaic stack formed on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Reduced defect zones are disposed adjacent to contact regions in portions of the photovoltaic cell and are formed by an anneal configured to improve overall performance. |
申请公布号 |
US8901695(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201213544415 |
申请日期 |
2012.07.09 |
申请人 |
International Business Machines Corporation |
发明人 |
Fogel Keith E.;Hong Augustin J.;Kim Jeehwan;Sadana Devendra K. |
分类号 |
H01L31/0203 |
主分类号 |
H01L31/0203 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Percello Louis J. |
主权项 |
1. A photovoltaic device, comprising:
one or more layers of a photovoltaic stack formed on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process, wherein the one or more layers include a buffer layer between a transparent electrode formed on the substrate and a p-type layer; contacts formed on the photovoltaic stack to provide a photovoltaic cell; and reduced defect zones disposed adjacent to contact regions in portions of the photovoltaic cell and formed by an anneal configured to improve overall performance, the anneal including a temperature of between about 155 degrees Celsius and about 250 degrees Celsius to render the reduced defect zones more conductive. |
地址 |
Armonk NY US |