| 摘要 |
There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.; |
| 主权项 |
1. A polymer having a repeating unit shown by the following general formula (1), wherein R1 represents any of a hydrogen atom, a fluorine atom, a methyl group, and a trifluoromethyl group, each R2, R3, and R4 independently represents any of a substituted or an unsubstituted linear, branched, or cyclic alkyl, alkenyl, and oxoalkyl group having 1 to 10 carbon atoms; or any of a substituted or an unsubstituted aryl, aralkyl, and aryl oxoalkyl group having 6 to 18 carbon atoms; or any two or more of R2, R3, and R4 may be bonded with each other to form a ring together with a sulfur atom in the formula, X1 represents O or CH2, A1 represents a linear, a branched, or a cyclic divalent hydrocarbon group having 1 to 10 carbon atoms, B1 represents an alkylene group having 1 to 10 carbon atoms or an arylene group having 6 to 18 carbon atoms wherein these groups may optionally contain a hetero atom except for a fluorine atom, and k1 represents an integer of 0 or 1. |
