| 发明名称 | Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP | ||
| 摘要 | The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. | ||
| 申请公布号 | US8900473(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US200912737650 | 申请日期 | 2009.07.23 |
| 申请人 | Hitachi Chemical Company, Ltd. | 发明人 | Minami Hisataka;Saisyo Ryouta;Ono Hiroshi |
| 分类号 | C03C15/00;C03C25/68;H01L21/302;H01L21/461;C09K3/14;B24B37/04;C09G1/02;H01L21/321;H01L23/00;H01L29/06 | 主分类号 | C03C15/00 |
| 代理机构 | Antonelli, Terry, Stout & Kraus, LLP. | 代理人 | Antonelli, Terry, Stout & Kraus, LLP. |
| 主权项 | 1. A substrate polishing method, comprising: preparing a substrate comprising a palladium layer; and removing at least a portion of the palladium layer by polishing the substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the CMP polishing liquid comprises 0.05-10 mass % of 1,2,4-triazole, 0.02-20 mass % of phosphoric acids, 0.05-20 mass % of hydrogen peroxide, and abrasive particles, the abrasive particles comprise colloidal silica, and a pH of the CMP polishing liquid is 1-4. | ||
| 地址 | Tokyo JP | ||