发明名称 CMP polishing slurry and method of polishing substrate
摘要 A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
申请公布号 US8900335(B2) 申请公布日期 2014.12.02
申请号 US201012768082 申请日期 2010.04.27
申请人 Hitachi Chemical Company, Ltd. 发明人 Fukasawa Masato;Koyama Naoyuki;Haga Kouji;Akutsu Toshiaki
分类号 B24D3/02;C09C1/68;C09K3/14;C09G1/02 主分类号 B24D3/02
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A method of producing a CMP polishing slurry, comprising preparing ingredient (A) cerium oxide particles, ingredient (B) a dispersant, ingredient (C) water, obtaining a solution containing ingredient (D) selected from the group consisting of at least one of a polymer of at least one of a methacrylic acid and the salt thereof, a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, and mixtures thereof, synthesized with use of a polymerization initiator, and mixing the ingredients (A), (B), (C) and (D) to prepare the CMP polishing slurry, wherein the polymerization initiator is a compound soluble completely at 25° C. when it is added at a ratio of 0.5 mass part in 99.5 mass parts of water or a compound soluble at 25° C. when it is added at a ratio of 0.5 mass part in 99.5 mass parts of water and at least one of an organic acid and an inorganic acid is added thereto in an amount of 2 moles with respect to 1 mole of the polymerization initiator, wherein the content of the methacrylic acid and the salt thereof for the polymer (D) is 10 to 100 tool % with respect to the total amount of the monomer components, the amount of dispersant added is 0.01 mass parts or more and 10 mass parts or less with respect to 100 mass parts of the cerium oxide particles, the amount of cerium oxide particles added is 0.1 to 5 mass parts with respect to 100 mass parts of the CMP polishing slurry, the polymer (D) has a weight-average molecular weight of 200 to 100,000, the amount of the polymer (D) is 0.01 to 5 mass parts with respect to 100 mass parts of the CMP polishing slurry, and(IV): (I) at least one peroxide selected from the group consisting of ammonium persulfate, potassium persulfate, and sodium persulfate, (II) at least one redox initiator initiators in combination of a sulfite salt, and selected from the combinations of (i) at least one selected from the group consisting of ammonium sulfite, ammonium hydrogen sulfite, potassium sulfite, potassium hydrogen sulfite, sodium sulfite, and sodium hydrogen sulfite and (ii) at least one selected from the group consisting of oxygen, air, and peroxide, (III) 2,2′-azobis[N-(2-carboxyethyl)-2-methyl propionamide]amphoteric azo compound and (IV) at least one cationic azo compound selected from the group consisting of 1-[(1-cyano-1-methylethyl)azo]formamide, 2,2′-azobis {2-methyl-N-[1,1-bis(hydroxymethyl)-2-hydroxyethyl]propionamide}, 2,2′-azobis{2-methyl-N-[2-(1-hydroxybutyl)]-propionamide}, 2,2′-azobis[2-methyl-N-(1-hydroxyethyl)]-propionamide, 2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane]hydrochloride salt, 2,2′-azobis[2-(2-imidazolin-2-yl)propane], 2,2′-azobis[2-(2-imidazolin-2-yl)propane]hydrochloride salt, 2,2′-azobis[2-(2-imidazolin-2-yl)propane]sulfate hydrate salt, 2,2′-azobis[2-(3,4,5,6-tetrahydropyrimidin-2-yl)propane]hydrochloride salt, 2,2′-azobis {2-[1-(2-hydroxyethyl)-2-imidazolin-2-yl]propane}hydrochloride salt, 2,2′-azobis[N-(2-carboxyethyl)-2-methylpropionamidine], and 2,2′-azobis(2-methyl propionamidoxime).
地址 Tokyo JP