发明名称 |
Gate-all-around nanowire MOSFET and method of formation |
摘要 |
A method for fabricating a semiconductor device comprises forming a nanowire on an insulator layer at a surface of a substrate; forming a dummy gate over a portion of the nanowire and a portion of the insulator layer; forming recesses in the insulator layer on opposing sides of the dummy gate; forming spacers on opposing sides of the dummy gate; forming source regions and drain regions in the recesses in the insulator layer on opposing sides of the dummy gate; depositing an interlayer dielectric on the source regions and the drain regions; removing the dummy gate to form a trench; removing the insulator layer under the nanowire such that a width of the trench underneath the nanowire is equal to or less than a distance between the spacers; and forming a replacement gate in the trench. |
申请公布号 |
US8900951(B1) |
申请公布日期 |
2014.12.02 |
申请号 |
US201314035060 |
申请日期 |
2013.09.24 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
分类号 |
H01L21/336;H01L29/06;H01L29/66 |
主分类号 |
H01L21/336 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. A method for fabricating a semiconductor device, comprising:
forming a nanowire on an insulator layer at a surface of a substrate; forming a dummy gate over a portion of the nanowire and a portion of the insulator layer; forming recesses in the insulator layer on opposing sides of the dummy gate; forming spacers on opposing sides of the dummy gate; forming source regions and drain regions in the recesses in the insulator layer on opposing sides of the dummy gate; depositing an interlayer dielectric on the source regions and the drain regions; removing the dummy gate to form a trench; removing the insulator layer under the nanowire such that a width of the trench underneath the nanowire is equal to or less than a distance between the spacers; and forming a replacement gate in the trench. |
地址 |
Armonk NY US |