| 发明名称 | Semiconductor memory circuit | ||
| 摘要 | Provided is a semiconductor memory circuit excellent in long-term reliability and reading characteristics and having low current consumption. The semiconductor memory circuit includes: a first inverter; a first non-volatile memory, which is electrically writable; a second inverter; and a second non-volatile memory, the first inverter having an output connected to a source of the first non-volatile memory, the first non-volatile memory having a drain connected to an input of the second inverter, the second inverter having an output connected to a source of the second non-volatile memory, the second non-volatile memory having a drain connected to an input of the first inverter, the drain of the second non-volatile memory serving as an output of the semiconductor memory circuit. | ||
| 申请公布号 | US8902645(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US201314033926 | 申请日期 | 2013.09.23 |
| 申请人 | Seiko Instruments Inc. | 发明人 | Tsumura Kazuhiro |
| 分类号 | G11C16/04;G11C16/12;G11C16/06;G11C16/24 | 主分类号 | G11C16/04 |
| 代理机构 | Adams & Wilks | 代理人 | Adams & Wilks |
| 主权项 | 1. A semiconductor memory circuit, comprising: a first inverter; a first non-volatile memory, which is electrically writable; a second inverter; and a second non-volatile memory, the first inverter having an output connected to a source of the first non-volatile memory, the first non-volatile memory having a drain connected to an input of the second inverter, the second inverter having an output connected to a source of the second non-volatile memory, the second non-volatile memory having a drain connected to an input of the first inverter, the drain of the second non-volatile memory serving as an output of the semiconductor memory circuit. | ||
| 地址 | JP | ||