| 摘要 |
The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top. |
| 主权项 |
1. An electronic component, comprising on a substrate:
at least one integrated MIM capacitor having a top capacitor electrode, and a bottom capacitor electrode at a smaller distance from the substrate than the top capacitor electrode; an electrically insulating first cover layer on the top capacitor electrode, which first cover layer partly or fully covers the top capacitor electrode and is made of a lead-containing dielectric material; a top barrier layer on the first cover layer, which top barrier layer is suitable for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance; an electrically insulating second cover layer on the top barrier layer, which second cover layer partly or fully covers the first cover layer and the top barrier layer and has a dielectric permittivity smaller than that of the first cover layer; and an electrically conductive resistor layer arranged on the second cover layer, which resistor layer is either connected or connectable to form a resistor of a defined ohmic resistance in an electronic circuit, wherein the top barrier layer is made of barium titanate, strontium titanate, barium strontiun titanate, strontium zirconate, zirconium oxide or zirconium titanate or a combination of at least two of these materials, wherein the top barrier layer is in contacted with the first cover layer and with the second cover layer, and wherein the second cover layer is made of a material containing hydrogen. |
