Thin film transistor device with accurately aligned electrode patterns

摘要

An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

主权项

1. A method of producing an electronic device, the electronic device comprising:
an optically transparent substrate, a pre-defined first electrode structure incorporating an optically transparent channel, at least one intermediate layer and a photosensitive dielectric layer disposed above the at least one intermediate layer, the method including: patterning a trench structure in a region of the photosensitive dielectric layer over the optically transparent channel by backside light exposure through said optically transparent substrate using the pre-defined first electrode structure as a mask and subsequent removal of at least part of the photosensitive dielectric layer from exposed regions; deposition of a further electrode at least partially within the trench structure and partially beyond the trench structure; wherein after deposition any portions of the further electrode that extend beyond the trench structure are separated from the at least one intermediate layer by the photosensitive dielectric layer.