发明名称 |
Semiconductor gas sensor and method for measuring a residual gas proportion with a semiconductor gas sensor |
摘要 |
A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture. |
申请公布号 |
US8899098(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201213683235 |
申请日期 |
2012.11.21 |
申请人 |
Micronas GmbH |
发明人 |
Senft Christoph;Simon Stefan;Hansch Walter |
分类号 |
G01N7/00;H01L29/66;G01N27/00;G01N27/414;G01N33/00 |
主分类号 |
G01N7/00 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A semiconductor gas sensor comprising:
a gas-sensitive gate electrode separated by a gap from a channel region and is configured as a suspended gate field effect transistor or the gas-sensitive gate electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled; and a semiconductor carrier layer or metallically conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer; wherein a surface of the gas-sensitive layer faces towards the channel region or the second plate, wherein the gate electrode configured as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm and is embodied on the surface of the platinum/gold alloy, and wherein the gap is filled with an oxygen-free gas mixture or a gas mixture with an oxygen proportion of less than 0.1%. |
地址 |
Freiburg DE |