发明名称 RFID IC with tunneling-voltage profile calibration
摘要 RFID tag ICs employ tunneling-voltage profile calibration during IC manufacturing to determine and store, typically in nonvolatile memory, a tunneling-voltage profile for writing data to the IC's nonvolatile memory. The IC may subsequently read the profile at power-up, prior to writing the memory, or at other times as determined by the IC or by an interrogating reader, and may determine an actual ramp profile for writing to the nonvolatile memory based on the read profile and one or more operating conditions. By using the read profile to determine an actual ramp profile for writing to the nonvolatile memory, the IC may reduce nonvolatile memory write time and oxide stress.
申请公布号 US8902627(B1) 申请公布日期 2014.12.02
申请号 US201313872974 申请日期 2013.04.29
申请人 Impinj, Inc. 发明人 Pesavento Alberto;Diorio Christopher J.
分类号 G11C11/22;G11C7/22;G06K19/07 主分类号 G11C11/22
代理机构 Turk IP Law, LLC 代理人 Turk IP Law, LLC
主权项 1. A method for writing a nonvolatile memory (NVM) of a Radio Frequency Identification (RFID) Integrated Circuit (IC) comprising: determining an operating condition of the IC; reading at least one predetermined ramp profile stored in a memory of the IC; determining an actual ramp profile based on the at least one predetermined ramp profile and the operating condition; and using the actual ramp profile to write the NVM.
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