Semiconductor device

摘要

In one embodiment, a semiconductor chip includes a gate electrode extending between a source electrode and a drain electrode. The source electrode and the drain electrode include finger form electrodes that are an engaged arrangement with each other. One or more gate drawing electrodes are connected to portions of the gate electrode, and protrusion electrodes connect the gate drawing electrodes to a gate shunting wiring disposed on a substrate.

主权项

1. A semiconductor device comprising:
a semiconductor chip comprising a source electrode of a form of fingers that extend from a source electrode terminal portion, a drain electrode having a form of fingers that extend from a drain terminal portion, the fingers of the source electrode engaging the fingers of the drain electrode, a gate electrode running through a space between the fingers of the engaging source and drain electrodes, a first gate drawing electrode disposed at and connected to one end of the gate electrode, and a second gate drawing electrode disposed at and connected to another end of the gate electrode; a substrate comprising a gate shunting substrate wiring, a source substrate wiring and a drain substrate wiring; a plurality of first protrusion electrodes disposed between and connecting the gate shunting substrate wiring and the first and second gate drawing electrodes; a plurality of second protrusion electrodes disposed between and connecting the source substrate wiring and the source terminal portion of the source electrode; and a plurality of third protrusion electrodes disposed between and connecting the drain substrate wiring and the drain terminal portion of the drain electrode.