发明名称 |
Organic thin film transistor with ion exchanged glass substrate |
摘要 |
Articles utilizing strengthened glass substrates, for example, ion-exchanged glass substrates, in combination with organic molecules or polymers are described along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors. |
申请公布号 |
US8901544(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201213690314 |
申请日期 |
2012.11.30 |
申请人 |
Corning Incorporated |
发明人 |
He Mingqian;Li Jianfeng;Matthews James Robert;Pambianchi Michael S |
分类号 |
H01L29/08;H01L35/24;H01L51/00;H01L51/05 |
主分类号 |
H01L29/08 |
代理机构 |
|
代理人 |
Barron Jason A. |
主权项 |
1. An article comprising:
a. a strengthened glass substrate having a first surface and a second surface and having a Vickers crack initiation threshold of at least 20 kgf; b. an organic semiconductor layer having a first surface and a second surface, wherein the first surface of the organic semiconductor layer is in direct contact with the second surface of the strengthened glass substrate; c. a dielectric layer having a first surface and a second surface; and d. at least one additional electrode; wherein the article does not contain a barrier layer between the organic semiconductor layer and the strengthened glass substrate; wherein the strengthened glass comprises an ion-exchanged glass; and wherein the article comprises a top-gate thin film transistor, photovoltaic device, diode, or display device. |
地址 |
Corning NY US |