发明名称 Organic thin film transistor with ion exchanged glass substrate
摘要 Articles utilizing strengthened glass substrates, for example, ion-exchanged glass substrates, in combination with organic molecules or polymers are described along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.
申请公布号 US8901544(B2) 申请公布日期 2014.12.02
申请号 US201213690314 申请日期 2012.11.30
申请人 Corning Incorporated 发明人 He Mingqian;Li Jianfeng;Matthews James Robert;Pambianchi Michael S
分类号 H01L29/08;H01L35/24;H01L51/00;H01L51/05 主分类号 H01L29/08
代理机构 代理人 Barron Jason A.
主权项 1. An article comprising: a. a strengthened glass substrate having a first surface and a second surface and having a Vickers crack initiation threshold of at least 20 kgf; b. an organic semiconductor layer having a first surface and a second surface, wherein the first surface of the organic semiconductor layer is in direct contact with the second surface of the strengthened glass substrate; c. a dielectric layer having a first surface and a second surface; and d. at least one additional electrode; wherein the article does not contain a barrier layer between the organic semiconductor layer and the strengthened glass substrate; wherein the strengthened glass comprises an ion-exchanged glass; and wherein the article comprises a top-gate thin film transistor, photovoltaic device, diode, or display device.
地址 Corning NY US