发明名称 Nitride semiconductor laser element
摘要 A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
申请公布号 US8900901(B2) 申请公布日期 2014.12.02
申请号 US201012814132 申请日期 2010.06.11
申请人 Nichia Corporation 发明人 Masui Shingo;Morizumi Tomonori
分类号 H01L21/20;H01S5/22;B82Y20/00;H01L21/02;H01S5/028;H01S5/20;H01S5/30;H01S5/343 主分类号 H01L21/20
代理机构 Global IP Counselors, LLP 代理人 Global IP Counselors, LLP
主权项 1. A method for manufacturing a nitride semiconductor laser element comprising a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer, wherein the nitride semiconductor layer includes an n-side semiconductor layer, an active layer and an p-side semiconductor layer laminated on the substrate, the method comprising: forming the ridge; forming a monocrystalline first film from side faces of the ridge to a top face of the nitride semiconductor layer on both sides of the ridge, the first film being one of AlN and Al2O3 containing hexagonal crystals; forming a second film containing polycrystalline or an amorphous substance above the nitride semiconductor layer and over the first film thereby forming the insulating protective film, the second film being one of ZrO and SiO2; and forming an additional protective film containing an amorphous substance on side faces of the nitride semiconductor layer, the additional protective film being made of material different from material of the first film or material of the second film the forming of the additional protective film including forming the additional protective film to be in direct contact with the side faces of the nitride semiconductor layer.
地址 Anan-shi JP