Semiconductor processing system having multiple decoupled plasma sources

摘要

A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.

主权项

1. A semiconductor substrate processing system, comprising:
a substrate support defined to support a substrate in exposure to a processing region; a first plasma chamber defined to generate a first plasma within an interior region of the first plasma chamber and supply reactive constituents of the first plasma from the interior region of the first plasma chamber to the processing region, the first plasma chamber including a first upper electrode positioned on an upper surface within the interior region of the first plasma chamber, the first upper electrode including at least one hole defined to enable fluid communication of a first process gas to the interior region of the first plasma chamber, the first plasma chamber including a first lower electrode positioned on a lower surface within the interior region of the first plasma chamber, the first lower electrode including at least one hole defined to enable passage of reactive constituents of the first plasma from the interior region of the first plasma chamber to the processing region, the first upper electrode and the first lower electrode positioned in a substantially parallel orientation with the substrate support, the first upper electrode and the first lower electrode separated from each other by the interior region of the first plasma chamber; a second plasma chamber defined to generate a second plasma within an interior region of the second plasma chamber and supply reactive constituents of the second plasma from the interior region of the second plasma chamber to the processing region, the second plasma chamber including a second upper electrode positioned on an upper surface within the interior region of the second plasma chamber, the second upper electrode including at least one hole defined to enable fluid communication of a second process gas to the interior region of the second plasma chamber, the second plasma chamber including a second lower electrode positioned on a lower surface within the interior region of the second plasma chamber, the second lower electrode including at least one hole defined to enable passage of reactive constituents of the second plasma from the interior region of the second plasma chamber to the processing region, the second upper electrode and the second lower electrode positioned in a substantially parallel orientation with the substrate support, the second upper electrode and the second lower electrode separated from each other by the interior region of the second plasma chamber, wherein the first and second plasma chambers are defined to be independently controlled; and an exhaust channel formed between the first and second plasma chambers; a baffle structure disposed within the exhaust channel between the first and second plasma chambers and separated from the first and second plasma chambers, the baffle structure configured to be movable in a first direction toward the substrate support and in a second direction away from the substrate support, the baffle structure configured to be movable in the first and second directions without corresponding movement of the first and second plasma chambers, the baffle structure sized smaller than the exhaust channel so as to provide for exhaust flow through the exhaust channel between the baffle structure and each of the first and second plasma chambers.