| 摘要 |
<p>According to the present invention, provided is a single crystal ingot manufacturing apparatus including: a chamber; a crucible installed in the chamber and containing a silicon solution for growing a single crystal ingot; a heater installed around the crucible and heating the crucible; a heat insulating material installed between an inner wall of the chamber and the periphery of the heater; a heat shield suspended between the single crystal ingot and the crucible and cooling the single crystal ingot; and an upper tube having a cylindrical shape and installed between the heat insulating material and the heat shield, wherein the upper tube includes an upper ring to which the heat shield is fixed, a lower ring to which the heat insulating material is fixed, tube units vertically stacked between the upper and lower rings and formed of a carbon material, and tube connecting parts formed of a molybdenum material and disposed between the upper ring, the lower ring, and the tube units, respectively, to maintain the shapes of the tube units.</p> |
