| 发明名称 |
CHEMICAL VAPOR DEPOSITED FILM FORMED BY PLASMA CHEMICAL VAPOR DEPOSITION METHOD |
| 摘要 |
A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element. |
| 申请公布号 |
KR20140136437(A) |
申请公布日期 |
2014.11.28 |
| 申请号 |
KR20147024084 |
申请日期 |
2013.01.16 |
| 申请人 |
TORAY ENGINEERING CO., LTD. |
发明人 |
FUJIMOTO TAKAYOSHI;YAMASHITA MASAMICHI |
| 分类号 |
C23C16/50;B32B9/00;C23C28/00 |
主分类号 |
C23C16/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
