| 摘要 |
<p>A plasma monitoring apparatus according to the present invention is installed on a process chamber for conducting the plasma process of a semiconductor wafer to monitor plasma. The plasma monitoring apparatus comprises a photodetection sensor part installed on a process chamber to detect light generated by plasma; a signal processing part for processing signals transmitted from the photodetection sensor part to process calculation; a data storage part for storing reference data for each step of the plasma process; and a display part for displaying a result of the processing of the signal processing part. The signal processing part determines the step of the plasma process by calculating the average value and change rate (gradient) of signals measured at predetermined periods. According to the present invention, abnormality and arc generation for each process can be monitored by accurately judging the kind of a process conducted while conducting a plasma etching process.</p> |
