| 摘要 |
<p>PURPOSE: A substrate for a semiconductor device, a nitrogen thin film structure using the same, and a forming method thereof are provided to obtain an ELO(Epitaxial Lateral Overgrowth) effect due to a hollow structure by growing a nitrogen thin film from the exposed substrate surface around the hollow structure. CONSTITUTION: A substrate(300) is used for a heterogeneous epitaxial thin film growth of semiconductor materials. A plurality of hollow structures(305) have an empty particle shape on the substrate. A nitride thin film(315) is formed on the substrate. The nitride thin film is comprised of two or more films. A buffer layer(310) is formed between the substrate and the nitride thin film.</p> |
