| 摘要 |
A method for measuring the changes of the electrical performance of an FDSOI transistor between a first and a second state of the transistor after an operating period t1, including the following steps: measurement of the transistor's capacities C1 and C2 respectively in the first and second states, according to a voltage VFG applied between the gate and the source and drain areas, determination, in relation to characteristic C1(VFG) varying between a maximum value Cmax and a minimum value Cmin, with three inflection points, of an ordinate value Cplat of C1(VFG) at the second inflection point of C1(VFG), and of two abscissa values VUpper(0) and VLower(0) of C1(VFG) according to equations VUpper(0)=C1-1((Cmax+Cplat)/2) and VLower(0)=C1-1((Cmin+Cplat)/2), determination, from characteristic C2(VFG), of two abscissa values VUpper(t1) and VLower(t1) of C2(VFG) according to equations VUpper(t1)=C2-1((Cmax+Cplat)/2) and VLower(t1)=C2-1((Cmin+Cplat)/2), determination of variations of defect densities DeltaDit1, DeltaDit2 between the transistor's first and second states, at the transistor's front and back interfaces, from values DeltaVUpper(t1)=VUpper(t1)-VUpper(0) and DeltaVLower(t1)=VLower(t1)-Vlower(0). |
