| 摘要 |
PROBLEM TO BE SOLVED: To provide micropipe-free single-crystal silicon carbide (SiC) and a method for producing the same.SOLUTION: A sublimation system 12 grows a SiC crystal 26 on a seed material 22 by placing a source material 20 and the seed material 22 in a reaction crucible 14 of the sublimation system 12 and placing the seed material 22 on a seed holder 24 inside the reaction crucible 14. Components of the sublimation system 12 including the source material 20, the reaction crucible 14, and the seed holder 14 are substantially free from unintentional impurities. By controlling a growth temperature, a growth pressure, a SiC sublimation flux and its composition, and a temperature gradient between the source material 20 and the seed material 22 or the SiC crystal 26 growing on the seed material 22, during a PVT process, micropipe-inducing process instability is eliminated and a micropipe-free SiC crystal is grown on the seed material 22. |
