| 发明名称 |
TRENCH FILLING METHOD AND PROCESSING APPARATUS |
| 摘要 |
The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed. |
| 申请公布号 |
US2014349468(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201414285874 |
申请日期 |
2014.05.23 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUZUKI Daisuke;TAKAHASHI Kazuya;OKADA Mitsuhiro;KOMORI Katsuhiko;ONODERA Satoshi |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for filling a trench formed on an insulating film of a workpiece, the method comprising:
forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench; forming a second amorphous silicon film on the first amorphous silicon film; and annealing the workpiece after the second amorphous silicon film is formed. |
| 地址 |
Tokyo JP |
