| 发明名称 |
EXPOSURE METHOD, REFLECTION TYPE MASK, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
According to embodiments, an exposure method is provided. In the exposure method, a transmittance of a pellicle is adjusted every position of a mask pattern included in a reflection type mask. And when adjusting the transmittance of the pellicle, a film thickness of the pellicle is adjusted on the basis of a transmittance correction amount. Thereafter, exposure is conducted onto a substrate by using the reflection type mask with the pellicle stuck thereon. |
| 申请公布号 |
US2014349219(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201314088743 |
申请日期 |
2013.11.25 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
MIZUNO Hiroyuki;Okamoto Yosuke;Koshiba Takeshi;Nagai Satoshi |
| 分类号 |
G03F7/20;G03F1/24 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An exposure method comprising:
adjusting a transmittance of a pellicle every position of a mask pattern included in a reflection type mask; and conducting exposure onto a substrate by using the reflection type mask with the pellicle stuck thereon. |
| 地址 |
Minato-ku JP |
