| 主权项 |
1. A high-energy ion implanter that accelerates an ion beam extracted from an ion source, transports the ion beam to a wafer along a beamline, and implants the ion beam into the wafer, the high-energy ion implanter comprising:
a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit that accelerates the ion beam so as to generate a high-energy ion beam; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum while changing the direction of the high-energy ion beam toward the wafer; a beam transportation line unit that transports the deflected high-energy ion beam to the wafer; and a substrate processing/supplying unit that uniformly implants the transported high-energy ion beam into the semiconductor wafer, wherein the beam transportation line unit includes a high-energy beam scanner and an electric field type beam collimator for high-energy, wherein the high-energy ion beam emitted from the deflection unit is scanned by the beam scanner and collimated by the electric field type beam collimator and is implanted into the wafer, and wherein an electric field type final energy filter that deflects the high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter. |
