NONVOLATILE MEMORY DEVICE

摘要

The present invention relates to a nonvolatile memory device. Suggested is a nonvolatile memory device which includes a first electrode and a second electrode which are separated from each other, at least one nanocrystal layer prepared between the first and the second electrodes, and a first metal layer and a second metal layer which are prepared between the first and the second electrodes and the nanocrystal layer and have bistability conducive properties. The first and the second metal layers are asymmetrical.