| 摘要 |
<p>A process for producing zinc oxide varistor is disclosed to allow that one step of having zinc oxide grains doped with non-equivalent ions and sufficiently semiconductorized and the other one step of preparing sintered powders having property of high-impedance are prepared by two separate procedures respectively, resulted in that the zinc oxide varistor produced by the process features both a high potential gradient and a high non-linearity coefficient; and more particularly the disclosed process is suited for producing a specific zinc oxide varistor whose potential gradient ranges from 2,000 to 9000 V/mm as well as non-linearity coefficient (±) ranges from 21.5 to 55.</p> |
