发明名称 |
METHOD OF P-REGION FORMATION |
摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to the technology of carrying out gallium diffusion to form a p-region in manufacturing semiconductor devices. In the method of the p-region formation powder-like gallium oxide (GaO) is used as a diffusant source. The process is carried out in two stages: 1 - gallium predeposition and 2 - gallium distillation in one tube. Predeposition and distillation are carried out at the process temperature of 1220°C, the predeposition time equals 30 minutes and the distillation time equals 130 minutes. Superficial resistance at the predeposition stage is 320±10 Ohm/cm, and at the distillation stage - 220±10 Ohm/cm.EFFECT: invention provides the reduction of scatter of the surface concentration values and obtaining a uniform doping on the entire surface of substrates. |
申请公布号 |
RU2534386(C2) |
申请公布日期 |
2014.11.27 |
申请号 |
RU20120154867 |
申请日期 |
2012.12.18 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) |
发明人 |
ISMAILOV TAGIR ABDURASHIDOVICH;SHANGEREEVA BIJKE ALIEVNA |
分类号 |
H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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