发明名称 |
BIPOLAR TRANSISTORS WITH CONTROL OF ELECTRIC FIELD |
摘要 |
The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics. |
申请公布号 |
US2014347135(A1) |
申请公布日期 |
2014.11.27 |
申请号 |
US201414284509 |
申请日期 |
2014.05.22 |
申请人 |
NXP B.V. |
发明人 |
Dinh Viet Thanh;Hurxk Godefridus Adrianus Maria;Vanhoucke Tony;Slotboom Jan;Heringa Anco;Zahariev Ivan;Gridelet Evelyne |
分类号 |
H03K17/10;H03F3/21;H03F3/19;H01L29/737;H01L29/165 |
主分类号 |
H03K17/10 |
代理机构 |
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代理人 |
|
主权项 |
1. A transistor circuit, comprising:
a bipolar transistor comprising a base, collector and emitter, and at least one gate terminal for controlling the electric field in a collector region of the transistor; a control circuit for controlling a bias voltage or bias voltages applied to the gate terminal or gate terminals, with different control voltages used for different transistor characteristics. |
地址 |
Eindhoven NL |