发明名称 BIPOLAR TRANSISTORS WITH CONTROL OF ELECTRIC FIELD
摘要 The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics.
申请公布号 US2014347135(A1) 申请公布日期 2014.11.27
申请号 US201414284509 申请日期 2014.05.22
申请人 NXP B.V. 发明人 Dinh Viet Thanh;Hurxk Godefridus Adrianus Maria;Vanhoucke Tony;Slotboom Jan;Heringa Anco;Zahariev Ivan;Gridelet Evelyne
分类号 H03K17/10;H03F3/21;H03F3/19;H01L29/737;H01L29/165 主分类号 H03K17/10
代理机构 代理人
主权项 1. A transistor circuit, comprising: a bipolar transistor comprising a base, collector and emitter, and at least one gate terminal for controlling the electric field in a collector region of the transistor; a control circuit for controlling a bias voltage or bias voltages applied to the gate terminal or gate terminals, with different control voltages used for different transistor characteristics.
地址 Eindhoven NL