SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND IMAGE CAPTURING SYSTEM

摘要

A solid-state image sensor including a pixel unit arranged on a semiconductor substrate and including a plurality of photoelectric converters, and a peripheral circuit unit arranged on the semiconductor substrate and including MOS transistors and a capacitive element portion, wherein a gate insulating film of the MOS transistor in the peripheral circuit unit and an insulating film between facing electrodes of the capacitive element portion are nitrided, and a density of nitrogen atoms in the nitrided insulating film of the capacitive element portion is higher than the density of the nitrogen atoms in the nitrided insulating film of the MOS transistor in the peripheral circuit unit.

主权项

1. A solid-state image sensor comprising:
a pixel unit arranged on a semiconductor substrate and including a plurality of photoelectric converters, and a peripheral circuit unit arranged on the semiconductor substrate and including a MOS transistor and a capacitive element portion, wherein a gate insulating film of the MOS transistor in the peripheral circuit unit and an insulating film between facing electrodes of the capacitive element portion are nitrided, and a density of nitrogen atoms in the nitrided insulating film of the capacitive element portion is higher than the density of the nitrogen atoms in the nitrided insulating film of the MOS transistor in the peripheral circuit unit.