发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE
摘要 A thin-film transistor (“TFT”) array substrate includes: a TFT including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode, and the source and drain electrode; a pixel electrode including a transparent conductive oxide and disposed in an opening defined in the second insulating layer; a capacitor including a first electrode disposed on a layer on which the active layer is disposed, and a second electrode disposed on a layer on which the gate electrode is disposed; a pad electrode disposed on the second insulating layer and including a material substantially the same as a material in the source electrode and the drain electrode; a first protective layer disposed on the pad electrode; and a second protective layer disposed on the first protective layer.
申请公布号 US2014346458(A1) 申请公布日期 2014.11.27
申请号 US201314061150 申请日期 2013.10.23
申请人 Samsung Display Co., Ltd. 发明人 Park Jong-Hyun;You Chun-Gi;Heo Seong-Kweon;Kim Jeong-Hwan
分类号 H01L27/12;H01L27/32 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin-film transistor array substrate comprising: a thin-film transistor comprising: an active layer;a gate electrode disposed on the active layer;a source electrode connected to a source region of the active layer;a drain electrode connected to a drain region of the active layer;a first insulating layer disposed between the active layer and the gate electrode; anda second insulating layer disposed between the gate electrode and the source electrode, and between the gate electrode and the drain electrode; a pixel electrode disposed in an opening defined in the second insulating layer, wherein the pixel electrode comprises a transparent conductive oxide, and; a capacitor comprising: a first electrode disposed on a layer, on which the active layer is disposed; anda second electrode disposed on a layer, on which the gate electrode is disposed; a pad electrode disposed on the second insulating layer, wherein the pad electrode comprises a material substantially the same as a material in the source electrode and the drain electrode; a first protective layer disposed on the pad electrode; and a second protective layer disposed on the first protective layer.
地址 Yongin-City KR