发明名称 |
THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE |
摘要 |
A thin-film transistor (“TFT”) array substrate includes: a TFT including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode, and the source and drain electrode; a pixel electrode including a transparent conductive oxide and disposed in an opening defined in the second insulating layer; a capacitor including a first electrode disposed on a layer on which the active layer is disposed, and a second electrode disposed on a layer on which the gate electrode is disposed; a pad electrode disposed on the second insulating layer and including a material substantially the same as a material in the source electrode and the drain electrode; a first protective layer disposed on the pad electrode; and a second protective layer disposed on the first protective layer. |
申请公布号 |
US2014346458(A1) |
申请公布日期 |
2014.11.27 |
申请号 |
US201314061150 |
申请日期 |
2013.10.23 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Park Jong-Hyun;You Chun-Gi;Heo Seong-Kweon;Kim Jeong-Hwan |
分类号 |
H01L27/12;H01L27/32 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin-film transistor array substrate comprising:
a thin-film transistor comprising:
an active layer;a gate electrode disposed on the active layer;a source electrode connected to a source region of the active layer;a drain electrode connected to a drain region of the active layer;a first insulating layer disposed between the active layer and the gate electrode; anda second insulating layer disposed between the gate electrode and the source electrode, and between the gate electrode and the drain electrode; a pixel electrode disposed in an opening defined in the second insulating layer, wherein the pixel electrode comprises a transparent conductive oxide, and; a capacitor comprising:
a first electrode disposed on a layer, on which the active layer is disposed; anda second electrode disposed on a layer, on which the gate electrode is disposed; a pad electrode disposed on the second insulating layer, wherein the pad electrode comprises a material substantially the same as a material in the source electrode and the drain electrode; a first protective layer disposed on the pad electrode; and a second protective layer disposed on the first protective layer. |
地址 |
Yongin-City KR |