| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to the field of growing profiled crystals of high-melting compounds from a melt by the Stepanov method, for instance, synthetic sapphire, ruby, yttrium-aluminum garnet, which can be applied in instrument-making, machine-building, thermometry, chemical industry. The method includes the formation of a melt column 5 between an inoculum 7 and an upper edge of a shape-former, equipped with a vertical ring feeding capillary 3 of the constant section and, at least, one vertical channel 4 of a small diameter, made in the upper part of the shape-former. In the process of a crystal 6 growing the distance from the upper edge of the shape-former to the level of the melt Neff is supported not higher than 0.8 h, and the feeding capillary 3 is made with the length L, determined from the ratio 2.5 h>L>h, where h is the height of the melt raise in the capillary.EFFECT: stability of the process of growing profiled crystals with the length to 500 mm and more with longitudinal channels of a small diameter.1 dwg |
