| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can prevent incomplete separation and decrease in reliability of the semiconductor device.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a first layer 311 and a second layer 312, which have weak adhesion to each other, on a first substrate; forming a first semiconductor element layer 302 and a first insulation layer on the second layer; forming a through-hole reaching the first layer in the first insulation layer; oxidizing the first layer exposed on the bottom of the through hole; forming wiring 306, which is electrically connected to the first semiconductor element layer, on the first insulation layer and in the through hole 355; and separating the first semiconductor element layer and the wiring from the first substrate to expose the wiring by separating the first layer from the second layer. In addition, an anisotropic conductive adhesive material 342 is provided between a separated second semiconductor element layer and the wiring, and the first semiconductor element layer and the second semiconductor element layer are electrically connected to each other through the anisotropic conductive adhesive material and wiring 356.</p> |
