发明名称 STACKED MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING STACKED MICROELECTRONIC DEVICES
摘要 Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.
申请公布号 US2014346683(A1) 申请公布日期 2014.11.27
申请号 US201414457000 申请日期 2014.08.11
申请人 MICRON TECHNOLOGY, INC. 发明人 Lua Edmund Koon Tian;Leow See Hiong;Lee Choon Kuan
分类号 H01L23/16;H01L25/065;H01L25/00 主分类号 H01L23/16
代理机构 代理人
主权项 1. A method of manufacturing a microelectronic device, the method comprising: forming a plurality of multi-tiered metal spacers having first spacer elements on a front-side surface of a first microelectronic die and second spacer elements on corresponding first spacer elements; attaching a back-side surface of a second microelectronic die to the second spacer elements; and wherein at least one of the first and second spacer elements is electrically isolated from at least one of the front-side surface of the first die and the back-side surface of the second die.
地址 Boise ID US