TRANSISTOR USING NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a transistor using a nitride semiconductor and a manufacturing method of the same, which can reduce gate-drain capacitance while suppressing an increase in gate-source capacitance thereby to achieve improvement in gain.SOLUTION: A transistor using a nitride semiconductor comprises an SFP (Source Field Plate) 10 formed on a gate electrode 8 via an insulation film layer 9, in which the insulation film layer 9 is formed in a manner such that a film thickness dat a part between a source electrode 6 and the gate electrode 8 and on the gate electrode 8 becomes thicker than a part (film thickness d) between the gate electrode 8 and a drain electrode 7.