METHOD INCLUDING A REMOVAL OF A HARDMASK FROM A SEMICONDUCTOR STRUCTURE AND RINSING THE SEMICONDUCTOR STRUCTURE WITH AN ALKALINE RINSE SOLUTION

摘要

A method includes providing a semiconductor structure. The semiconductor structure includes an electrically conductive feature including a first metal, a dielectric material provided over the electrically conductive feature and a hardmask. The hardmask includes a hardmask material and is provided over the dielectric material. An opening is provided in the interlayer dielectric and the hardmask. A portion of the electrically conductive feature is exposed at a bottom of the opening. The hardmask is removed. The removal of the hardmask includes exposing the semiconductor structure to an etching solution including hydrogen peroxide and a corrosion inhibitor. After the removal of the hardmask, the semiconductor structure is rinsed. Rinsing the semiconductor structure includes exposing the semiconductor structure to an alkaline rinse solution.

主权项

1. A method, comprising:
providing a semiconductor structure, the semiconductor structure comprising an electrically conductive feature comprising a first metal, a dielectric material provided over said electrically conductive feature, a hardmask comprising a hardmask material, said hardmask being provided over said dielectric material, and an opening provided in said dielectric material and said hardmask, a portion of said electrically conductive feature being exposed at a bottom of said opening; removing said hardmask, the removal of said hardmask comprising exposing said semiconductor structure to an etching solution comprising hydrogen peroxide and a corrosion inhibitor; and after the removal of said hardmask, rinsing said semiconductor structure, wherein rinsing said semiconductor structure comprises exposing said semiconductor structure to an alkaline rinse solution, wherein both said etching solution and said rinse solution comprise the same buffering agent.