| 发明名称 |
METHOD FOR USING METAL BILAYER |
| 摘要 |
A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal. |
| 申请公布号 |
US2014349461(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201414458263 |
申请日期 |
2014.08.13 |
| 申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
Antonov Vassil;Bhat Vishwanath;Carlson Chris |
| 分类号 |
H01L49/02;H01L27/108 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for using a metal bilayer, comprising:
providing a bottom electrode; providing a dielectric layer disposed on and in direct contact with said lower electrode; providing a metal bilayer which serves as a top electrode in a capacitor, said metal bilayer disposed on and in direct contact with said dielectric layer, wherein said metal bilayer consists of a noble metal in direct contact with said dielectric layer and a metal nitride in direct contact with said noble metal. |
| 地址 |
Tao-Yuan Hsien TW |
