| 摘要 |
<p>PURPOSE: A multi-workpiece processing chamber and a gas flow control method thereof are provided to make plasma reaction uniformly generated in an internal process space by supplying gas to the center of the internal process space or the edge of the respectively. CONSTITUTION: A plurality of the internal process space(A,B) comprises a substrate support portion. A first gas supply ratio controller(610) controls a feed ratio of the gas provided from the gas source to a plurality of internal process space. A second gas supply ratio controller(620) divides the gas supplied to the internal process space at least two divided spaces. The gas of a plurality of internal process space is discharged through a common ventilation channel(300). A bypass adjusting part detours the route of the gas provided to the internal process space to the common ventilation channel.</p> |
