| 摘要 |
<p>A pressure-sensitive adhesive tape for protecting a semiconductor wafer surface for which either the adhesive force when peeling under heat at 50°C from an SUS 280 polished surface, or the adhesive force after irradiation with a 500-mJ ultraviolet beam, is no more than 1.0 N/25 mm, and is no more than 50% of the adhesive force prior to heating or irradiation with an ultraviolet beam. The tape has an adhesive layer on a substrate film, the substrate film having a total thickness of 50 to 200 µm. The thickness of the adhesive layer is 10 to 50 µm. The ratio of the high-modulus-layer thickness to the low-modulus-layer thickness is 1:9 to 5:5. The high-modulus layer is disposed on the rear surface of the adhesive layer, and has a thickness of at least 10 µm, the high-modulus layer comprising polypropylene or a straight-chain polyethylene. The low-modulus layer comprises an ethylene-vinyl acetate copolymer having an MFR of 0.8 to 10 g/10 min and a vinyl acetate content of 5-20 percent by mass.</p> |
