| 摘要 |
<p>The present invention is a method for manufacturing a bonded wafer, including performing a plasma activation treatment on at least one of the bonded surfaces of the bond wafer and the base wafer before bonding, wherein the plasma activation treatment is performed while a back surface of at least one of the bond wafer and the base wafer is placed on a stage with the back surface being in point contact or line contact with the stage. The method can inhibit increase in attached substances such as particles on the back surface of a wafer during the plasma activation treatment, and prevent re-attachment of the attached substances to the bonded surface of the wafer, particularly when the wafer after the plasma activation treatment is cleaned with a batch cleaning apparatus.</p> |
