MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE

摘要

The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film 2 formed on a plane of a substrate 1 and having a composition represented by a composition formula RMnO3 (where R is at least one trivalent rare earth element selected from lanthanoids), wherein an atomic layer containing an element R and not containing Mn and an atomic layer containing Mn and not containing the element R are alternately stacked along a direction perpendicular to the plane of the substrate, and the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate. An aspect of the present invention also provides an oxide laminate having the manganese oxide thin film 2 of the above aspect to which strongly-correlated oxide thin film 3, 31 or 32 are formed contiguously.

主权项

1. A manganese oxide thin film formed on a plane of a substrate, comprising:
a substrate of plane orientation (210); and a manganese oxide thin film formed on a plane of the substrate and having a composition represented by composition formula RMnO3, where R is at least one trivalent rare earth element selected from lanthanoids, wherein an atomic layer containing an element R and not containing Mn, and an atomic layer containing Mn and not containing the element R are alternately stacked along a stacking direction perpendicular to the plane of the substrate, the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate and has a polar surface containing an electric field, and cations R and Mn are translocated relative to O to generate polarization so as to lean toward the stacking direction.