SEMICONDUCTOR DEVICE

摘要

A semiconductor device (100a) with a thin-film transistor (10a) includes: a gate electrode (62) formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode; an oxide semiconductor layer (68) formed on the gate insulating layer; source and drain electrodes (70s, 70d) electrically connected to the oxide semiconductor layer; a protective layer (72) formed on the oxide semiconductor layer and the source and drain electrodes; an oxygen supplying layer (74) formed on the protective layer; an anti-diffusion layer (78) formed on the oxygen supplying layer; and a transparent electrode (81) formed on the anti-diffusion layer and made of an amorphous transparent oxide.

主权项

1. A semiconductor device including a thin-film transistor, the device comprising:
a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer formed on the gate insulating layer; source and drain electrodes electrically connected to the oxide semiconductor layer; a protective layer formed on the oxide semiconductor layer and the source and drain electrodes; an oxygen supplying layer formed on the protective layer; an anti-diffusion layer formed on the oxygen supplying layer; and a transparent electrode formed on the anti-diffusion layer, the transparent electrode being made of an amorphous transparent oxide.