发明名称 SENSE AMPLIFIER LOCAL FEEDBACK TO CONTROL BIT LINE VOLTAGE
摘要 Methods for precharging bit lines using closed-loop feedback are described. In one embodiment, a sense amplifier may include a bit line precharge circuit for setting a bit line to a read voltage prior to sensing a memory cell connected to the bit line. The bit line precharge circuit may include a first transistor in a source-follower configuration with a first gate and a first source node electrically coupled to the bit line. By applying local feedback from the first source node to the first gate, the bit line settling time may be reduced. In some cases, a first voltage applied to the first gate may be determined based on a first current drawn from the first bit line. Thus, the first voltage applied to the first gate may vary over time depending on the conductivity of a selected memory cell connected to the bit line.
申请公布号 WO2014190046(A1) 申请公布日期 2014.11.27
申请号 WO2014US38954 申请日期 2014.05.21
申请人 SANDISK 3D LLC 发明人 SIAU, CHANG;JIANG, XIAOWEI;CHEN, YINGCHANG
分类号 G11C16/24;G11C7/04;G11C7/06;G11C7/12;G11C7/14;G11C11/56;G11C13/00;G11C16/26 主分类号 G11C16/24
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