| 摘要 |
A glass substrate (3) is bonded to a front surface (1c) of a wafer (1) with an adhesive layer (2) being interposed therebetween, said front surface (1c) being provided with a front surface element structure. The adhesive layer (2) is formed so as to range from the front surface (1c) to a chamfered part (1b) and the lateral surface of the wafer (1) on the wafer (1) side, while being formed on a first surface (3c) of the glass substrate (3), but not on a chamfered part (3b) and a lateral surface (3a) of the glass substrate (3) on the glass substrate (3) side. After grinding the back surface of the wafer (1), a back surface element structure is formed on the back surface. The glass substrate (3) is separated from the adhesive layer (2) by irradiating a laser (13) from the glass substrate (3) side. By removing the adhesive layer (2) and cutting the wafer (1) by dicing, a chip which is provided with a thin semiconductor device is completed. Consequently, a supporting substrate bonded to a wafer can be easily removed, and breaking and cracking of the wafer can be prevented. |
