发明名称 COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING SAME
摘要 Provided is a composition for forming a ferroelectric thin film in which the Young's modulus for film formation is adjusted during a calcining step and a firing step, said composition being capable of yielding a high-crystallinity thin film having substantially no incidence of cracking during firing even at a coating film thickness obtained in a single cycle, allowing the number of coating films to be reduced and the manufacturing efficiency of the coating film to be increased. Further provided is a method for manufacturing said composition. The composition for forming a ferroelectric thin film contains a precursor for a ferroelectric thin film, a solvent, and a reaction-controlling substance, and yields a ferroelectric thin film by calcining and firing of a coating film, wherein the composition is characterized in that the reaction-controlling substance content is an amount for which the Young's modulus for film formation in a calcining stage at 200-300°C is no greater than 42 Gpa and the Young's modulus for film formation in a firing stage at 400-500°C is at least 55 Gpa. Using said composition makes it possible to form a high-crystallinity thin film in which there is substantially no incidence of cracking during firing even at the coating film thickness obtained in a single cycle.
申请公布号 WO2014188926(A1) 申请公布日期 2014.11.27
申请号 WO2014JP62821 申请日期 2014.05.14
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 DOI TOSHIHIRO;SAKURAI HIDEAKI;SOYAMA NOBUYUKI
分类号 H01L21/316;C08L33/26;C08L39/06 主分类号 H01L21/316
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