| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve an increase in SNM (Static Noise Margin) under a certain power supply voltage.SOLUTION: A semiconductor storage device includes: first and second p-type field effect transistors Tp1, Tp2 and first and second n-type field effect transistors Tn1, Tn2 which are formed on a semiconductor substrate; insulation films each formed on each transistor; and third and fourth n-type field effect transistors Tn3, Tn4 formed on the insulation films, in which the six transistors compose an SRAM. And each of the transistors Tn3, Tn4 has a planar structure and at least a part of a channel region of the transistor Tn3 is formed to overlap at least a part of each gate electrode of the transistors Tp2 and Tn2 when viewed from a normal direction of the semiconductor substrate, and at least a part of a channel region of the transistor Tn4 is formed to overlap at least a part of each gate electrode of the transistors Tp1 and Tn1 when viewed from the normal direction of the semiconductor substrate.</p> |
