METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES

摘要

Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

主权项

1. A method of forming a memory string, comprising:
forming a stack of alternating layers of semiconductor material and dielectric material; forming an opening within the stack; diffusing a dopant into the semiconductor material exposed to the opening to form a plurality of diffused regions, each of the diffused regions extending a distance into the semiconductor material from a sidewall of the opening; selectively etching the diffused regions to form recesses in the semiconductor material, wherein etching substantially stops at each interface between the semiconductor material and the diffused regions; forming charge storage structures within the recesses; and forming a channel region within the opening.